ترجمه مقاله Efficiency improvement of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized two BSF layer in top and bottom cells

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ترجمه مقاله Efficiency improvement of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized two BSF layer in top and bottom cells

BSF layers with different thicknesses have been used in the upper and the lower cell and simulations have been done using the Silvaco ATLAS numerical modelling tools. It has been also found that in under the current matching condition with thinner upper BSF layers (160 nm, 30 nm) and a thicker lower BSF layer (1000 nm, 30 nm), JSC short circuit current density and VOC open circuit voltage and conversion efficiency solar cell is improved. Major steps of simulation and its description and results have been compared to the previously published data in order to describe accuracy of the results. By selecting the best thickness of BSF layer, the efficiency can be increased up to 15% which happens because of increase in photo-generation rates and absorption in the solar cells. This article shows some characteristics of the proposed dual junction solar cell such as photo-generation rate, short circuit current density, open circuit voltage and efficiency of the device relative to thickness of B ...

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